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	Trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks
	Tian, Ye*; Jiang, Lianjun; Zhang, Xuejun; Zhang, Guangfu; Zhu, Qiuxiang
刊名	AIP Advances
	2018
卷号	8期号:3页码:035105
ISSN号	2158-3226
DOI	10.1063/1.5006433
URL标识	查看原文
WOS记录号	WOS:000428528400031;EI:20181104888998
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5256707
专题	湖南城市学院
作者单位	1.[Zhang, Guangfu 2.Zhu, Qiuxiang 3.Tian, Ye 4.Zhang, Xuejun 5.Jiang, Lianjun] Hunan City Univ, Sch Informat & Elect Engn, Yiyang 413000, Peoples R China.
推荐引用方式 GB/T 7714	Tian, Ye*,Jiang, Lianjun,Zhang, Xuejun,et al. Trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks[J]. AIP Advances,2018,8(3):035105.
APA	Tian, Ye*,Jiang, Lianjun,Zhang, Xuejun,Zhang, Guangfu,&Zhu, Qiuxiang.(2018).Trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks.AIP Advances,8(3),035105.
MLA	Tian, Ye*,et al."Trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks".AIP Advances 8.3(2018):035105.

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