Ultra bright AlGaInP light emitting diodes with pyramidally patterned GaP spreading layer | |
Zuo, Zhiyuan; Wang, Ruijun; Liu, Duo; Yu, Qian; Feng, Zhaobin; Xu, Xiangang | |
刊名 | APPLIED PHYSICS LETTERS
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2011 | |
卷号 | 99期号:12 |
DOI | 10.1063/1.3641906 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5250399 |
专题 | 山东大学 |
作者单位 | Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, People |
推荐引用方式 GB/T 7714 | Zuo, Zhiyuan,Wang, Ruijun,Liu, Duo,et al. Ultra bright AlGaInP light emitting diodes with pyramidally patterned GaP spreading layer[J]. APPLIED PHYSICS LETTERS,2011,99(12). |
APA | Zuo, Zhiyuan,Wang, Ruijun,Liu, Duo,Yu, Qian,Feng, Zhaobin,&Xu, Xiangang.(2011).Ultra bright AlGaInP light emitting diodes with pyramidally patterned GaP spreading layer.APPLIED PHYSICS LETTERS,99(12). |
MLA | Zuo, Zhiyuan,et al."Ultra bright AlGaInP light emitting diodes with pyramidally patterned GaP spreading layer".APPLIED PHYSICS LETTERS 99.12(2011). |
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