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	Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations
	Luo, Dong Bao[1]; Si, Hai Gang[2]; Wang, Yuan Xu[3]
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2014
卷号	589页码:125-131
关键词	In4Se3-x Defect Thermoelectric properties Electronic structure
ISSN号	0925-8388
DOI	http://dx.doi.org/10.1016/j.jallcom.2013.11.189
URL标识	查看原文
收录类别	SCI(E) ; EI
WOS记录号	WOS:000330181400020
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5235659
专题	河南大学
作者单位	1.[1]Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China. 2.[2]Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China. 3.[3]Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China.
推荐引用方式 GB/T 7714	Luo, Dong Bao[1],Si, Hai Gang[2],Wang, Yuan Xu[3]. Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2014,589:125-131.
APA	Luo, Dong Bao[1],Si, Hai Gang[2],&Wang, Yuan Xu[3].(2014).Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations.JOURNAL OF ALLOYS AND COMPOUNDS,589,125-131.
MLA	Luo, Dong Bao[1],et al."Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations".JOURNAL OF ALLOYS AND COMPOUNDS 589(2014):125-131.

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