Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations | |
Luo, Dong Bao[1]; Si, Hai Gang[2]; Wang, Yuan Xu[3] | |
刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
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2014 | |
卷号 | 589页码:125-131 |
关键词 | In4Se3-x Defect Thermoelectric properties Electronic structure |
ISSN号 | 0925-8388 |
DOI | http://dx.doi.org/10.1016/j.jallcom.2013.11.189 |
URL标识 | 查看原文 |
收录类别 | SCI(E) ; EI |
WOS记录号 | WOS:000330181400020 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5235659 |
专题 | 河南大学 |
作者单位 | 1.[1]Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China. 2.[2]Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China. 3.[3]Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China. |
推荐引用方式 GB/T 7714 | Luo, Dong Bao[1],Si, Hai Gang[2],Wang, Yuan Xu[3]. Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2014,589:125-131. |
APA | Luo, Dong Bao[1],Si, Hai Gang[2],&Wang, Yuan Xu[3].(2014).Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations.JOURNAL OF ALLOYS AND COMPOUNDS,589,125-131. |
MLA | Luo, Dong Bao[1],et al."Electronic structure and thermoelectric properties of In4Se3-x (x=0, 0.25, 0.5, 0.75): First-principles calculations".JOURNAL OF ALLOYS AND COMPOUNDS 589(2014):125-131. |
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