| Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics | |
| Yuanjie Lv; Zhaojun Lin; Timothy D. Corrigan; Jianzhi Zhao; Zhifang Cao; Lingguo Meng; Chongbiao Luan; Zhanguo Wang; Hong Chen | |
| 刊名 | Journal of Applied Physics
 |
| 2011 | |
| 期号 | 7页码:074512-1-074512-6 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5224118 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Physics, Shandong University, Jinan, 250100, China 2.School of Physics, Shandong University, Jinan, 250100, China 3.Depart |
| 推荐引用方式 GB/T 7714 | Yuanjie Lv,Zhaojun Lin,Timothy D. Corrigan,et al. Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics[J]. Journal of Applied Physics,2011(7):074512-1-074512-6. |
| APA | Yuanjie Lv.,Zhaojun Lin.,Timothy D. Corrigan.,Jianzhi Zhao.,Zhifang Cao.,...&Hong Chen.(2011).Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics.Journal of Applied Physics(7),074512-1-074512-6. |
| MLA | Yuanjie Lv,et al."Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics".Journal of Applied Physics .7(2011):074512-1-074512-6. |
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