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	Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
	Yuanjie Lv; Zhaojun Lin; Lingguo Meng; Yingxia Yu; Chongbiao Luan; Zhifang Cao; Hong Chen; Baoquan Sun; Zhanguo Wang
刊名	Applied physics letters
	2011
期号	12页码:123504-1-123504-3
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5223965
专题	山东大学
作者单位	1.School of Physics, Shandong University, Jinan 250100, China 2.School of Physics, Shandong University, Jinan 250100, China 3.School o
推荐引用方式 GB/T 7714	Yuanjie Lv,Zhaojun Lin,Lingguo Meng,et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. Applied physics letters,2011(12):123504-1-123504-3.
APA	Yuanjie Lv.,Zhaojun Lin.,Lingguo Meng.,Yingxia Yu.,Chongbiao Luan.,...&Zhanguo Wang.(2011).Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics.Applied physics letters(12),123504-1-123504-3.
MLA	Yuanjie Lv,et al."Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics".Applied physics letters .12(2011):123504-1-123504-3.

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