Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics | |
Yuanjie Lv; Zhaojun Lin; Lingguo Meng; Yingxia Yu; Chongbiao Luan; Zhifang Cao; Hong Chen; Baoquan Sun; Zhanguo Wang | |
刊名 | Applied physics letters
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2011 | |
期号 | 12页码:123504-1-123504-3 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5223965 |
专题 | 山东大学 |
作者单位 | 1.School of Physics, Shandong University, Jinan 250100, China 2.School of Physics, Shandong University, Jinan 250100, China 3.School o |
推荐引用方式 GB/T 7714 | Yuanjie Lv,Zhaojun Lin,Lingguo Meng,et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. Applied physics letters,2011(12):123504-1-123504-3. |
APA | Yuanjie Lv.,Zhaojun Lin.,Lingguo Meng.,Yingxia Yu.,Chongbiao Luan.,...&Zhanguo Wang.(2011).Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics.Applied physics letters(12),123504-1-123504-3. |
MLA | Yuanjie Lv,et al."Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics".Applied physics letters .12(2011):123504-1-123504-3. |
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