Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors | |
Yuanjie Lv; Zhaojun Lin; Yu Zhang; Lingguo Meng; Chongbiao Luan; Zhifang Cao; Hong Chen; Zhanguo Wang | |
刊名 | Applied physics letters
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2011 | |
期号 | 12页码:123512-1-123512-3 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5223942 |
专题 | 山东大学 |
作者单位 | 1.School of Physics, Shandong University, Jinan 250100, People\'s Republic of China 2.School of Physics, Shandong University, Jinan 2 |
推荐引用方式 GB/T 7714 | Yuanjie Lv,Zhaojun Lin,Yu Zhang,et al. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Applied physics letters,2011(12):123512-1-123512-3. |
APA | Yuanjie Lv.,Zhaojun Lin.,Yu Zhang.,Lingguo Meng.,Chongbiao Luan.,...&Zhanguo Wang.(2011).Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.Applied physics letters(12),123512-1-123512-3. |
MLA | Yuanjie Lv,et al."Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".Applied physics letters .12(2011):123512-1-123512-3. |
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