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	Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
	Yuanjie Lv; Zhaojun Lin; Yu Zhang; Lingguo Meng; Chongbiao Luan; Zhifang Cao; Hong Chen; Zhanguo Wang
刊名	Applied physics letters
	2011
期号	12页码:123512-1-123512-3
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5223942
专题	山东大学
作者单位	1.School of Physics, Shandong University, Jinan 250100, People\'s Republic of China 2.School of Physics, Shandong University, Jinan 2
推荐引用方式 GB/T 7714	Yuanjie Lv,Zhaojun Lin,Yu Zhang,et al. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Applied physics letters,2011(12):123512-1-123512-3.
APA	Yuanjie Lv.,Zhaojun Lin.,Yu Zhang.,Lingguo Meng.,Chongbiao Luan.,...&Zhanguo Wang.(2011).Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.Applied physics letters(12),123512-1-123512-3.
MLA	Yuanjie Lv,et al."Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".Applied physics letters .12(2011):123512-1-123512-3.

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