Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation

CORC > 兰州化学物理研究所 > 中国科学院兰州化学物理研究所 > 固体润滑国家重点实验室

	Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation
	Mo YF(莫宇飞) ; Zhao WJ(赵文杰) ; Huang DM(黄德明) ; Zhao F(赵飞) ; Bai MW(白明武)
刊名	Ultramicroscopy
	2009
卷号	109 页码:247-252
关键词	Nanotexture Local anodic oxidation Atomic force microscopy Nanotribology
ISSN号	0304-3991
通讯作者	白明武
中文摘要	Nano-sized textures resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication and nanotribological properties of nanotexture by local anodic oxidation (LAO) on H-passivated Si surface are presented. A special attention is paid to ﬁnd the relation between the size of oxide nanotexture and operational parameters such as tip-sample pulsed bias voltage, pulsewidth, and relative humidity to fabricate oxide nanotexture. The nanotribological properties were investigated by a colloidal probe. The results indicate that the nanotextures exhibited low adhesion and greatly reduced friction force at nanometer scale.
学科主题	材料科学与物理化学
收录类别	SCI
资助信息	the National Natural Science Foundation of China under Grant no. 50675217;National 973 Program: 2007CB607601
语种	英语
WOS记录号	WOS:000264280200006
公开日期	2012-11-13
内容类型	期刊论文
源URL	[http://210.77.64.217/handle/362003/2152]
专题	兰州化学物理研究所_固体润滑国家重点实验室
推荐引用方式 GB/T 7714	Mo YF,Zhao WJ,Huang DM,et al. Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation[J]. Ultramicroscopy,2009,109:247-252.
APA	莫宇飞,赵文杰,黄德明,赵飞,&白明武.(2009).Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation.Ultramicroscopy,109,247-252.
MLA	莫宇飞,et al."Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation".Ultramicroscopy 109(2009):247-252.