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Single p-n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes
Lv, Bingbing[1]; Tang, Yingwen[2]; Lou, Shiyun[3]; Xu, Yanling[4]; Zhou, Shaomin[5]
刊名JOURNAL OF MATERIALS CHEMISTRY C
2016
卷号4期号:23页码:5416-5423
ISSN号2050-7526
DOIhttp://dx.doi.org/10.1039/c6tc01402j
URL标识查看原文
收录类别SCI(E) ; EI
WOS记录号WOS:000378273700032
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5203774
专题河南大学
作者单位[1]Key Laboratory for Special Functional Materials, Ministry of Education, Henan University, Kaifeng, 475004, China [2]College of Physics and Information Engineering, Minnan Normal University, Zhangzhou, 363000, China [3]Key Laboratory for Special Functional Materials, Ministry of Education, Henan University, Kaifeng, 475004, China [4]Audit Department, Henan University, Kaifeng, 475004, China[5]Key Laboratory for Special Functional Materials, Ministry of Education, Henan University, Kaifeng, 475004, China
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Lv, Bingbing[1],Tang, Yingwen[2],Lou, Shiyun[3],et al. Single p-n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016,4(23):5416-5423.
APA Lv, Bingbing[1],Tang, Yingwen[2],Lou, Shiyun[3],Xu, Yanling[4],&Zhou, Shaomin[5].(2016).Single p-n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes.JOURNAL OF MATERIALS CHEMISTRY C,4(23),5416-5423.
MLA Lv, Bingbing[1],et al."Single p-n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes".JOURNAL OF MATERIALS CHEMISTRY C 4.23(2016):5416-5423.
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