Growth and characterization of semi-insulating SiC single crystal | |
Song, Sheng; Hu, Xiao-Bo; Xu, Xian-Gang | |
刊名 | Rengong Jingti Xuebao/Journal of Synthetic Crystals
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2012 | |
卷号 | 41期号:SUPPL. 1页码:166-169 |
关键词 | Numerical simulation Polytype Semi-insulating SiC single crystal Sublimation |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5201582 |
专题 | 山东大学 |
作者单位 | State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
推荐引用方式 GB/T 7714 | Song, Sheng,Hu, Xiao-Bo,Xu, Xian-Gang. Growth and characterization of semi-insulating SiC single crystal[J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals,2012,41(SUPPL. 1):166-169. |
APA | Song, Sheng,Hu, Xiao-Bo,&Xu, Xian-Gang.(2012).Growth and characterization of semi-insulating SiC single crystal.Rengong Jingti Xuebao/Journal of Synthetic Crystals,41(SUPPL. 1),166-169. |
MLA | Song, Sheng,et al."Growth and characterization of semi-insulating SiC single crystal".Rengong Jingti Xuebao/Journal of Synthetic Crystals 41.SUPPL. 1(2012):166-169. |
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