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	Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect
	Jia, Caihong[1]; Yin, Xiaoqian[2]; Yang, Guang[3]; Wu, Yonghui[4]; Li, Jiachen[5]; Chen, Yonghai[6]; Zhang, Weifeng[7]
刊名	APPLIED PHYSICS LETTERS
	2017
卷号	111期号:11
ISSN号	0003-6951
DOI	http://dx.doi.org/10.1063/1.4992142
URL标识	查看原文
收录类别	SCI(E) ; EI
WOS记录号	WOS:000413590200004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5182473
专题	河南大学
作者单位	1.[1]Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 2.[2]Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 3.[3]Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 4.[4]Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 5.[5]Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 6.[6]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.,Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China. 7.[7]Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China.
推荐引用方式 GB/T 7714	Jia, Caihong[1],Yin, Xiaoqian[2],Yang, Guang[3],et al. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect[J]. APPLIED PHYSICS LETTERS,2017,111(11).
APA	Jia, Caihong[1].,Yin, Xiaoqian[2].,Yang, Guang[3].,Wu, Yonghui[4].,Li, Jiachen[5].,...&Zhang, Weifeng[7].(2017).Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect.APPLIED PHYSICS LETTERS,111(11).
MLA	Jia, Caihong[1],et al."Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect".APPLIED PHYSICS LETTERS 111.11(2017).

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