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	First-principles study of the effect of Bi_(Ga) heteroantisites in GaAs:Bi alloy
	Dechun Li; Ming Yang; Shengzhi Zhao; Yongqing Cai; Yunhao Lu; Zhaoqiang Bai; Yuanping Feng
刊名	Computational Materials Science
	2012
页码	178-181
关键词	GaAs saturable absorber First principles Hybrid functional Bi doping
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5180467
专题	山东大学
作者单位	1.School of Information Science and Engineering, Shandong University, Jinan 250100, China 2.Department of Physics, Faculty of Scienc
推荐引用方式 GB/T 7714	Dechun Li,Ming Yang,Shengzhi Zhao,et al. First-principles study of the effect of Bi_(Ga) heteroantisites in GaAs:Bi alloy[J]. Computational Materials Science,2012:178-181.
APA	Dechun Li.,Ming Yang.,Shengzhi Zhao.,Yongqing Cai.,Yunhao Lu.,...&Yuanping Feng.(2012).First-principles study of the effect of Bi_(Ga) heteroantisites in GaAs:Bi alloy.Computational Materials Science,178-181.
MLA	Dechun Li,et al."First-principles study of the effect of Bi_(Ga) heteroantisites in GaAs:Bi alloy".Computational Materials Science (2012):178-181.

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