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	Oscillation of coercivity between positive and negative in Mn_xGe_(1-x):H ferromagnetic semiconductor films
	Qin YF(秦羽丰); Yan SS(颜世申); Xiao SQ(萧淑琴); Li Q(李强); Dai ZK(代正坤); Shen TT(沈婷婷); Yang AC(杨爱春); Pei J(裴娟); Kang SS(康仕寿); Dai YY(代由勇)
刊名	Chinese Physics B
	2013
期号	05页码:513-517
关键词	magnetic semiconductor hydrogenation MnxGe1-x antiferromagnetic coupling
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5172414
专题	山东大学
作者单位	School of Physics,National Key Laboratory of Crystal Materials
推荐引用方式 GB/T 7714	Qin YF,Yan SS,Xiao SQ,et al. Oscillation of coercivity between positive and negative in Mn_xGe_(1-x):H ferromagnetic semiconductor films[J]. Chinese Physics B,2013(05):513-517.
APA	Qin YF.,Yan SS.,Xiao SQ.,Li Q.,Dai ZK.,...&Mei LM.(2013).Oscillation of coercivity between positive and negative in Mn_xGe_(1-x):H ferromagnetic semiconductor films.Chinese Physics B(05),513-517.
MLA	Qin YF,et al."Oscillation of coercivity between positive and negative in Mn_xGe_(1-x):H ferromagnetic semiconductor films".Chinese Physics B .05(2013):513-517.

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