An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method | |
Yang, Qing; Yuan, Yirang | |
刊名 | APPLIED MATHEMATICS AND COMPUTATION
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2013 | |
卷号 | 225页码:407-424 |
关键词 | Semiconductor device Mixed finite element method Characteristics-mixed finite element method Post-processing step Error estimates |
DOI | 10.1016/j.amc.2013.09.067 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5154864 |
专题 | 山东大学 |
作者单位 | 1.Shandong Normal Univ, Sch Math Sci, Jinan 250014, Peoples R China. 2.Shandong Univ, Inst Math, Jinan 250100, Peoples R Ch |
推荐引用方式 GB/T 7714 | Yang, Qing,Yuan, Yirang. An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method[J]. APPLIED MATHEMATICS AND COMPUTATION,2013,225:407-424. |
APA | Yang, Qing,&Yuan, Yirang.(2013).An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method.APPLIED MATHEMATICS AND COMPUTATION,225,407-424. |
MLA | Yang, Qing,et al."An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method".APPLIED MATHEMATICS AND COMPUTATION 225(2013):407-424. |
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