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	An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method
	Yang, Qing; Yuan, Yirang
刊名	APPLIED MATHEMATICS AND COMPUTATION
	2013
卷号	225页码:407-424
关键词	Semiconductor device Mixed finite element method Characteristics-mixed finite element method Post-processing step Error estimates
DOI	10.1016/j.amc.2013.09.067
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5154864
专题	山东大学
作者单位	1.Shandong Normal Univ, Sch Math Sci, Jinan 250014, Peoples R China. 2.Shandong Univ, Inst Math, Jinan 250100, Peoples R Ch
推荐引用方式 GB/T 7714	Yang, Qing,Yuan, Yirang. An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method[J]. APPLIED MATHEMATICS AND COMPUTATION,2013,225:407-424.
APA	Yang, Qing,&Yuan, Yirang.(2013).An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method.APPLIED MATHEMATICS AND COMPUTATION,225,407-424.
MLA	Yang, Qing,et al."An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method".APPLIED MATHEMATICS AND COMPUTATION 225(2013):407-424.

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