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FDTD modeling of graphene devices using complex conjugate dispersion material model
Lin, Hai*; Pantoja, Mario F.; Angulo, Luis D.; Alvarez, Jesus; Martin, Rafael G.; Garcia, Salvador G.
刊名IEEE Microwave and Wireless Components Letters
2012
卷号22期号:12页码:612-614
关键词Auxiliary differential equation (ADE) metal-insulator-metal (MIM) surface plasmon-polariton (SPP)
ISSN号1531-1309
DOI10.1109/LMWC.2012.2227466
URL标识查看原文
WOS记录号WOS:000315652300002;EI:20133016539454
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5148356
专题华中师范大学
作者单位[Lin, Hai] Cent China Normal Univ, Wuhan 430079, Peoples R China.
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Lin, Hai*,Pantoja, Mario F.,Angulo, Luis D.,et al. FDTD modeling of graphene devices using complex conjugate dispersion material model[J]. IEEE Microwave and Wireless Components Letters,2012,22(12):612-614.
APA Lin, Hai*,Pantoja, Mario F.,Angulo, Luis D.,Alvarez, Jesus,Martin, Rafael G.,&Garcia, Salvador G..(2012).FDTD modeling of graphene devices using complex conjugate dispersion material model.IEEE Microwave and Wireless Components Letters,22(12),612-614.
MLA Lin, Hai*,et al."FDTD modeling of graphene devices using complex conjugate dispersion material model".IEEE Microwave and Wireless Components Letters 22.12(2012):612-614.
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