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	Electronic Properties of MoS2-WS2Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy
	Chen, Kun[1]; Wan, Xi[1]; Wen, Jinxiu[2]; Xie, Weiguang[3]; Kang, Zhiwen[1]; Zeng, Xiaoliang[4]; Chen, Huanjun[2]; Xu, Jian-Bin[1]
	2015
卷号	9期号:10页码:9868
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5130186
专题	暨南大学
作者单位	1.[1] Department of Electronic Engineering and Materials Science, Technology Research Center, Chinese University of Hong Kong, Hong Kong, Hong Kong 2.[2] State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, China 3.[3] Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, China 4.[4] Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
推荐引用方式 GB/T 7714	Chen, Kun[1],Wan, Xi[1],Wen, Jinxiu[2],et al. Electronic Properties of MoS2-WS2Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy[J],2015,9(10):9868.
APA	Chen, Kun[1].,Wan, Xi[1].,Wen, Jinxiu[2].,Xie, Weiguang[3].,Kang, Zhiwen[1].,...&Xu, Jian-Bin[1].(2015).Electronic Properties of MoS2-WS2Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.,9(10),9868.
MLA	Chen, Kun[1],et al."Electronic Properties of MoS2-WS2Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy".9.10(2015):9868.

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