Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips

	Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips
	Sun X. J. ; Hu L. Z. ; Song H. ; Li Z. M. ; Li D. B. ; Jiang H. ; Miao G. Q.
刊名	Solid-State Electronics
	2009
卷号	53 期号:9 页码:1032-1035
ISSN号	0038-1101
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI ; EI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/26285]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun X. J.,Hu L. Z.,Song H.,et al. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips[J]. Solid-State Electronics,2009,53(9):1032-1035.
APA	Sun X. J..,Hu L. Z..,Song H..,Li Z. M..,Li D. B..,...&Miao G. Q..(2009).Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips.Solid-State Electronics,53(9),1032-1035.
MLA	Sun X. J.,et al."Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips".Solid-State Electronics 53.9(2009):1032-1035.