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	Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
	Yan, Xiaobing[1]; Hao, Hua[2]; Chen, Yingfang[3]; Shi, Shoushan[4]; Zhang, Erpeng[5]; Lou, Jianzhong[6]; Liu, Baoting[7]
刊名	NANOSCALE RESEARCH LETTERS
	2014
卷号	9期号:1页码:548
关键词	Resistive switching Self-rectifying Schottky barrier
ISSN号	1556-276X
DOI	http://dx.doi.org/10.1186/1556-276X-9-548
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5079697
专题	河北大学
作者单位	1.[1]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 2.Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China. 3.[2]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 4.[3]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 5.[4]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 6.[5]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 7.[6]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 8.[7]Hebei Univ, Dept Phys, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Yan, Xiaobing[1],Hao, Hua[2],Chen, Yingfang[3],et al. Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory[J]. NANOSCALE RESEARCH LETTERS,2014,9(1):548.
APA	Yan, Xiaobing[1].,Hao, Hua[2].,Chen, Yingfang[3].,Shi, Shoushan[4].,Zhang, Erpeng[5].,...&Liu, Baoting[7].(2014).Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory.NANOSCALE RESEARCH LETTERS,9(1),548.
MLA	Yan, Xiaobing[1],et al."Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory".NANOSCALE RESEARCH LETTERS 9.1(2014):548.

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