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	Low-Temperature Deposition of nc-SiOx:H below 400 degrees C Using Magnetron Sputtering
	Li Yun[1]; Yin Chen-Chen[2]; Ji Yun[3]; Shi Zhen-Liang[4]; Jin Cong-Hui[5]; Yu Wei[6]; Li Xiao-Wei[7]
刊名	CHINESE PHYSICS LETTERS
	2015
卷号	32期号:4
ISSN号	0256-307X
DOI	http://dx.doi.org/10.1088/0256-307X/32/4/046802
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5072733
专题	河北大学
作者单位	1.[1]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 2.[2]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 3.[3]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 4.[4]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 5.[5]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 6.[6]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 7.[7]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Li Yun[1],Yin Chen-Chen[2],Ji Yun[3],et al. Low-Temperature Deposition of nc-SiOx:H below 400 degrees C Using Magnetron Sputtering[J]. CHINESE PHYSICS LETTERS,2015,32(4).
APA	Li Yun[1].,Yin Chen-Chen[2].,Ji Yun[3].,Shi Zhen-Liang[4].,Jin Cong-Hui[5].,...&Li Xiao-Wei[7].(2015).Low-Temperature Deposition of nc-SiOx:H below 400 degrees C Using Magnetron Sputtering.CHINESE PHYSICS LETTERS,32(4).
MLA	Li Yun[1],et al."Low-Temperature Deposition of nc-SiOx:H below 400 degrees C Using Magnetron Sputtering".CHINESE PHYSICS LETTERS 32.4(2015).

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