The near-infrared photoluminescence of GaAs epilayers grown on Si

	The near-infrared photoluminescence of GaAs epilayers grown on Si
	Liang J. C. ; Li P. L. ; Gao Y. ; Zhao J. L.
刊名	Journal of Materials Science
	1997
卷号	32 期号:16 页码:4377-4382
ISSN号	0022-2461
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/25400]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liang J. C.,Li P. L.,Gao Y.,et al. The near-infrared photoluminescence of GaAs epilayers grown on Si[J]. Journal of Materials Science,1997,32(16):4377-4382.
APA	Liang J. C.,Li P. L.,Gao Y.,&Zhao J. L..(1997).The near-infrared photoluminescence of GaAs epilayers grown on Si.Journal of Materials Science,32(16),4377-4382.
MLA	Liang J. C.,et al."The near-infrared photoluminescence of GaAs epilayers grown on Si".Journal of Materials Science 32.16(1997):4377-4382.