Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition

	Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition
	Gao C. X. ; Li S. W. ; Yang J. ; Liu B. B.
刊名	Chinese Physics Letters
	1998
卷号	15 期号:10 页码:724-726
ISSN号	0256-307X
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/25343]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gao C. X.,Li S. W.,Yang J.,et al. Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition[J]. Chinese Physics Letters,1998,15(10):724-726.
APA	Gao C. X.,Li S. W.,Yang J.,&Liu B. B..(1998).Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition.Chinese Physics Letters,15(10),724-726.
MLA	Gao C. X.,et al."Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition".Chinese Physics Letters 15.10(1998):724-726.