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	The Reverse Lateral Photovoltaic Effect in Boron-Diffused Si p-n Junction Structure
	Qiao, Shuang[1]; Liu, Yanan[2]; Liu, Jihong[3]; Chen, Jianhui[4]; Wang, Shufang[5]; Fu, Guangsheng[6]
刊名	IEEE ELECTRON DEVICE LETTERS
	2016
卷号	37期号:2页码:201-204
关键词	Semiconductor materials silicon photovoltaic effects optical detectors
ISSN号	0741-3106
DOI	http://dx.doi.org/10.1109/LED.2015.2508881
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5065954
专题	河北大学
作者单位	1.[1]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 2.[2]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 3.[3]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 4.[4]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 5.[5]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 6.[6]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Qiao, Shuang[1],Liu, Yanan[2],Liu, Jihong[3],et al. The Reverse Lateral Photovoltaic Effect in Boron-Diffused Si p-n Junction Structure[J]. IEEE ELECTRON DEVICE LETTERS,2016,37(2):201-204.
APA	Qiao, Shuang[1],Liu, Yanan[2],Liu, Jihong[3],Chen, Jianhui[4],Wang, Shufang[5],&Fu, Guangsheng[6].(2016).The Reverse Lateral Photovoltaic Effect in Boron-Diffused Si p-n Junction Structure.IEEE ELECTRON DEVICE LETTERS,37(2),201-204.
MLA	Qiao, Shuang[1],et al."The Reverse Lateral Photovoltaic Effect in Boron-Diffused Si p-n Junction Structure".IEEE ELECTRON DEVICE LETTERS 37.2(2016):201-204.

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