Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well

	Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well
	Cao L. X. ; Huang S. H. ; Lu S. Z. ; Lin J. L.
刊名	Journal of Colloid and Interface Science
	2005
卷号	284 期号:2 页码:516-520
ISSN号	0021-9797
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/24975]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Cao L. X.,Huang S. H.,Lu S. Z.,et al. Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well[J]. Journal of Colloid and Interface Science,2005,284(2):516-520.
APA	Cao L. X.,Huang S. H.,Lu S. Z.,&Lin J. L..(2005).Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well.Journal of Colloid and Interface Science,284(2),516-520.
MLA	Cao L. X.,et al."Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well".Journal of Colloid and Interface Science 284.2(2005):516-520.