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	The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface
	Yang, Chen; Chen, Zhiming; Hu, Jichao; Ren, Zhanqiang; Lin, Shenghuang
	2012
卷号	47页码:1331-1334
关键词	Semiconductors Interfaces Epitaxial growth Electron microscopy Crystal structure
ISSN号	0025-5408
DOI	10.1016/j.materresbull.2012.03.018
URL标识	查看原文
WOS记录号	WOS:000304384100008
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5024284
专题	西安理工大学
推荐引用方式 GB/T 7714	Yang, Chen,Chen, Zhiming,Hu, Jichao,et al. The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface[J],2012,47:1331-1334.
APA	Yang, Chen,Chen, Zhiming,Hu, Jichao,Ren, Zhanqiang,&Lin, Shenghuang.(2012).The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface.,47,1331-1334.
MLA	Yang, Chen,et al."The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface".47(2012):1331-1334.

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