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	Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer
	Niu, Ying-Xi; Tang, Xiao-Yan; Jia, Ren-Xu; Sang, Ling; Hu, Ji-Chao; Yang, Fei; Wu, Jun-Min; Pan, Yan; Zhang, Yu-Ming
	2018
卷号	35
ISSN号	0256-307X
DOI	10.1088/0256-307X/35/7/077103
URL标识	查看原文
WOS记录号	WOS:000439269700018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4975219
专题	西安理工大学
推荐引用方式 GB/T 7714	Niu, Ying-Xi,Tang, Xiao-Yan,Jia, Ren-Xu,et al. Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer[J],2018,35.
APA	Niu, Ying-Xi.,Tang, Xiao-Yan.,Jia, Ren-Xu.,Sang, Ling.,Hu, Ji-Chao.,...&Zhang, Yu-Ming.(2018).Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer.,35.
MLA	Niu, Ying-Xi,et al."Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer".35(2018).

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