QQ客服 官方微博 反馈留言

	Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se
	Liu, Jiang; Tian, Liqiang; Mou, Yao; Jia, Wanli; Zhang, Lin; Liu, Rujun
	2018
卷号	764页码:674-678
关键词	Bi2O2Se Electronic structure Mechanical property Debye-temperature Minimum thermal conductivity First-principles calculation
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2018.06.120
URL标识	查看原文
WOS记录号	WOS:000444058300080
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4974242
专题	西安理工大学
推荐引用方式 GB/T 7714	Liu, Jiang,Tian, Liqiang,Mou, Yao,et al. Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se[J],2018,764:674-678.
APA	Liu, Jiang,Tian, Liqiang,Mou, Yao,Jia, Wanli,Zhang, Lin,&Liu, Rujun.(2018).Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se.,764,674-678.
MLA	Liu, Jiang,et al."Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se".764(2018):674-678.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。