4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate | |
Wang, Xi; Pu, Hongbin; Liu, Qing; An, Liqi | |
2018 | |
卷号 | 122页码:1-8 |
关键词 | SiC Light triggered thyristor Double-layer Trenched-junction Amplifying gate |
ISSN号 | 0749-6036 |
DOI | 10.1016/j.spmi.2018.09.004 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000446152200001 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4973207 |
专题 | 西安理工大学 |
推荐引用方式 GB/T 7714 | Wang, Xi,Pu, Hongbin,Liu, Qing,et al. 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate[J],2018,122:1-8. |
APA | Wang, Xi,Pu, Hongbin,Liu, Qing,&An, Liqi.(2018).4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate.,122,1-8. |
MLA | Wang, Xi,et al."4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate".122(2018):1-8. |
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