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	4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate
	Wang, Xi; Pu, Hongbin; Liu, Qing; An, Liqi
	2018
卷号	122页码:1-8
关键词	SiC Light triggered thyristor Double-layer Trenched-junction Amplifying gate
ISSN号	0749-6036
DOI	10.1016/j.spmi.2018.09.004
URL标识	查看原文
WOS记录号	WOS:000446152200001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4973207
专题	西安理工大学
推荐引用方式 GB/T 7714	Wang, Xi,Pu, Hongbin,Liu, Qing,et al. 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate[J],2018,122:1-8.
APA	Wang, Xi,Pu, Hongbin,Liu, Qing,&An, Liqi.(2018).4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate.,122,1-8.
MLA	Wang, Xi,et al."4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate".122(2018):1-8.

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