| Bandgaps properties of III-phosphides (BP, AlP, GaP, InP) materials excited by ultrasonic | |
| Cui, H.; Zhang, Y.; Kang, Q.; Chang, H. M.; Zhang, X. B.; Zhai, R. H.; Wang, G. Q. | |
| 2019 | |
| 卷号 | 177页码:58-63 |
| 关键词 | Terahertz Phonon Polariton Bandgaps |
| ISSN号 | 0030-4026 |
| DOI | 10.1016/j.ijleo.2018.09.146 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000450136600008 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4970288 |
| 专题 | 西安理工大学 |
| 推荐引用方式 GB/T 7714 | Cui, H.,Zhang, Y.,Kang, Q.,et al. Bandgaps properties of III-phosphides (BP, AlP, GaP, InP) materials excited by ultrasonic[J],2019,177:58-63. |
| APA | Cui, H..,Zhang, Y..,Kang, Q..,Chang, H. M..,Zhang, X. B..,...&Wang, G. Q..(2019).Bandgaps properties of III-phosphides (BP, AlP, GaP, InP) materials excited by ultrasonic.,177,58-63. |
| MLA | Cui, H.,et al."Bandgaps properties of III-phosphides (BP, AlP, GaP, InP) materials excited by ultrasonic".177(2019):58-63. |
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