Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy

CORC > 兰州化学物理研究所 > 中国科学院兰州化学物理研究所 > 固体润滑国家重点实验室

	Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy
	Zhou HD(周惠娣); Li HX(李红轩); Chen JM(陈建敏); Chen JM(陈建敏); Ji L(吉利)
刊名	Chinese Physics Letters
	2010
卷号	27 期号:8 页码:88102(1-4)
ISSN号	0256-307X
通讯作者	陈建敏
中文摘要	Molecular dynamical simulation is carried out to investigate the efects of the incident energy on a-C:H flmgrowth from C and H atomic fux. Our simulations show that the flm growth at low incident energy (1 eV) isdominated by the adsorption of H and C atoms. At moderate incident energy (10 and 20 eV), the ionreaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy(30 and 40 eV), the a-C:H flm growth is a two-step process: one is the adsorption and the shallow implantationof C atoms, and the other is the deep implantation of H atoms.
学科主题	材料科学与物理化学
收录类别	SCI
资助信息	the National Natural Science Foundation of China under Grant Nos 50705093, 50575217;the Science Fund for Creative Research Groups of the National Science Foundation of China under Grant No 50421502;the National Basic Research Program of China under Grant No 2007CB607601
语种	英语
公开日期	2012-09-28
内容类型	期刊论文
源URL	[http://210.77.64.217/handle/362003/972]
专题	兰州化学物理研究所_固体润滑国家重点实验室兰州化学物理研究所_先进润滑与防护材料研究发展中心
通讯作者	Chen JM(陈建敏); Chen JM(陈建敏)
推荐引用方式 GB/T 7714	Zhou HD,Li HX,Chen JM,et al. Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy[J]. Chinese Physics Letters,2010,27(8):88102(1-4).
APA	周惠娣,李红轩,陈建敏,陈建敏,&吉利.(2010).Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy.Chinese Physics Letters,27(8),88102(1-4).
MLA	周惠娣,et al."Molecular dynamical simulations on a-C:H film growth from C and H atomic flux: efect of incident energy".Chinese Physics Letters 27.8(2010):88102(1-4).