| Study of photoluminescences of the Ar+implanted porous silicon and the porous structure of Ar+-implanted silicon | |
| Lv, Xiao-Yi; Yang, Yong-Bing; Jia, Zhen-Hong; Xue, Tao | |
| 刊名 | Guangdianzi Jiguang/Journal of Optoelectronics Laser
 |
| 2008 | |
| 卷号 | 19期号:12页码:1640-1643 |
| 关键词 | Emission peaks PL intensity Porous structures Single crystal silicon |
| ISSN号 | 1005-0086 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4848435 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Lv, Xiao-Yi,Yang, Yong-Bing,Jia, Zhen-Hong,et al. Study of photoluminescences of the Ar+implanted porous silicon and the porous structure of Ar+-implanted silicon[J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser,2008,19(12):1640-1643. |
| APA | Lv, Xiao-Yi,Yang, Yong-Bing,Jia, Zhen-Hong,&Xue, Tao.(2008).Study of photoluminescences of the Ar+implanted porous silicon and the porous structure of Ar+-implanted silicon.Guangdianzi Jiguang/Journal of Optoelectronics Laser,19(12),1640-1643. |
| MLA | Lv, Xiao-Yi,et al."Study of photoluminescences of the Ar+implanted porous silicon and the porous structure of Ar+-implanted silicon".Guangdianzi Jiguang/Journal of Optoelectronics Laser 19.12(2008):1640-1643. |
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