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Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes
Shi, Zhifeng; Zhao, Long; Xia, Xiaochuan; Zhao, Wang; Wang, Hui; Wang, Jin; Dong, Xin; Zhang, Baolin; Du, Guotong
刊名JOURNAL OF LUMINESCENCE
2011
卷号131页码:1645-1648
关键词Metal-organic chemical vapor deposition MgZnO Electroluminescence
ISSN号0022-2313
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4840073
专题大连理工大学
作者单位1.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.
2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China.
3.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.
4.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China.
推荐引用方式
GB/T 7714
Shi, Zhifeng,Zhao, Long,Xia, Xiaochuan,et al. Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes[J]. JOURNAL OF LUMINESCENCE,2011,131:1645-1648.
APA Shi, Zhifeng.,Zhao, Long.,Xia, Xiaochuan.,Zhao, Wang.,Wang, Hui.,...&Du, Guotong.(2011).Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes.JOURNAL OF LUMINESCENCE,131,1645-1648.
MLA Shi, Zhifeng,et al."Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes".JOURNAL OF LUMINESCENCE 131(2011):1645-1648.
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