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	Reliability of Memories Protected by Multibit Error Correction Codes Against MBUs
	Ming, Zhu; Yi, Xiao Li; Chang, Liu; Wei, Zhang Jian
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2011
卷号	58页码:289-295
关键词	Memory MTTF multibit error correction codes multiple bit upsets reliability
ISSN号	0018-9499
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4838340
专题	大连理工大学
作者单位	1.Harbin Inst Technol, Ctr Microelect, Harbin 150001, Hlj, Peoples R China. 2.Natl Key Lab Sci & Technol Reliabil Phys & Applic, Guangzhou 510610, Guangdong, Peoples R China. 3.Harbin Inst Technol, Ctr Microelect, Harbin 150001, Hlj, Peoples R China. 4.Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Ming, Zhu,Yi, Xiao Li,Chang, Liu,et al. Reliability of Memories Protected by Multibit Error Correction Codes Against MBUs[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2011,58:289-295.
APA	Ming, Zhu,Yi, Xiao Li,Chang, Liu,&Wei, Zhang Jian.(2011).Reliability of Memories Protected by Multibit Error Correction Codes Against MBUs.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,58,289-295.
MLA	Ming, Zhu,et al."Reliability of Memories Protected by Multibit Error Correction Codes Against MBUs".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 58(2011):289-295.

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