| Effects of vanadium-compensated concentration on the electrical characteristics of 6H-SiC photoconductive semiconductor switches | |
| Zhou Y.; Jin A.; Wang D.; Wang Q. | |
| 2012 | |
| 会议名称 | 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012 |
| 会议日期 | 2012-06-02 |
| 会议地点 | Harbin |
| 页码 | 1508-1510 |
| 会议录 | 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012
 |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4815872 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.School of Electrical Engineering, Anhui University of Technology, Maanshan 243002, China 2.School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, China |
| 推荐引用方式 GB/T 7714 | Zhou Y.,Jin A.,Wang D.,et al. Effects of vanadium-compensated concentration on the electrical characteristics of 6H-SiC photoconductive semiconductor switches[C]. 见:2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012. Harbin. 2012-06-02. |
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