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Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photoconductive Semiconductor Switches
Wang DJ(王德君)
2012
会议名称2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia
页码1508-1510
会议录2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/4812393
专题大连理工大学
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GB/T 7714
Wang DJ. Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photoconductive Semiconductor Switches[C]. 见:2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia.
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