Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photoconductive Semiconductor Switches | |
Wang DJ(王德君) | |
2012 | |
会议名称 | 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia |
页码 | 1508-1510 |
会议录 | 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4812393 |
专题 | 大连理工大学 |
推荐引用方式 GB/T 7714 | Wang DJ. Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photoconductive Semiconductor Switches[C]. 见:2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia. |
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