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	Effects of annealing temperatures on crystalline quality of silicon based (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3dielectric ceramic thin films by sol-gel process
	Cao, Gang; Wu, Shihua; Shi, Feng
刊名	Journal of Materials Science: Materials in Electronics
	2014
卷号	26期号:1页码:217-221
DOI	10.1007/s10854-014-2386-0
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4802630
专题	山东大学
作者单位	1.School of Management Science and Engineering, Shandong University of Finance and Economics, Jinan 2.250014, China
推荐引用方式 GB/T 7714	Cao, Gang,Wu, Shihua,Shi, Feng. Effects of annealing temperatures on crystalline quality of silicon based (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3dielectric ceramic thin films by sol-gel process[J]. Journal of Materials Science: Materials in Electronics,2014,26(1):217-221.
APA	Cao, Gang,Wu, Shihua,&Shi, Feng.(2014).Effects of annealing temperatures on crystalline quality of silicon based (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3dielectric ceramic thin films by sol–gel process.Journal of Materials Science: Materials in Electronics,26(1),217-221.
MLA	Cao, Gang,et al."Effects of annealing temperatures on crystalline quality of silicon based (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3dielectric ceramic thin films by sol–gel process".Journal of Materials Science: Materials in Electronics 26.1(2014):217-221.

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