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Characterization of homoepitaxial β-Ga2O3films prepared by metal-organic chemical vapor deposition
Du, Xuejian; Mi, Wei; Luan, Caina; Li, Zhao; Xia, Changtai; Ma, Jin
刊名Journal of Crystal Growth
2014
卷号404页码:75-79
DOI10.1016/j.jcrysgro.2014.07.011
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4801725
专题山东大学
作者单位1.School of Physics, Shandong University, Jinan
2.250100, China
3.Key Laboratory o
推荐引用方式
GB/T 7714
Du, Xuejian,Mi, Wei,Luan, Caina,et al. Characterization of homoepitaxial β-Ga2O3films prepared by metal-organic chemical vapor deposition[J]. Journal of Crystal Growth,2014,404:75-79.
APA Du, Xuejian,Mi, Wei,Luan, Caina,Li, Zhao,Xia, Changtai,&Ma, Jin.(2014).Characterization of homoepitaxial β-Ga2O3films prepared by metal-organic chemical vapor deposition.Journal of Crystal Growth,404,75-79.
MLA Du, Xuejian,et al."Characterization of homoepitaxial β-Ga2O3films prepared by metal-organic chemical vapor deposition".Journal of Crystal Growth 404(2014):75-79.
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