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	Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
	Lv YJ(吕元杰); Feng ZH(冯志红); Lin ZJ(林兆军); Guo HY(郭红雨); Gu GD(顾国栋); Yin JY(尹甲运); Wang YG(王元刚); Xu P(徐鹏); Song XB(宋旭波); Cai SJ(蔡树军)
刊名	Chinese Physics B
	2014
期号	07页码:653-656
关键词	AlN/GaN electron mobility polarization Coulomb field scattering polarization
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4800217
专题	山东大学
作者单位	National Key Laboratory of Application Specific Integrated Circuit ,Hebei S
推荐引用方式 GB/T 7714	Lv YJ,Feng ZH,Lin ZJ,et al. Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. Chinese Physics B,2014(07):653-656.
APA	Lv YJ.,Feng ZH.,Lin ZJ.,Guo HY.,Gu GD.,...&Cai SJ.(2014).Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors.Chinese Physics B(07),653-656.
MLA	Lv YJ,et al."Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors".Chinese Physics B .07(2014):653-656.

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