| Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition | |
| Du, Xuejian; Mi, Wei; Luan, Caina; Li, Zhao; Xia, Changtai; Ma, Jin | |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 2014 | |
| 卷号 | 404页码:75-79 |
| 关键词 | X-ray diffraction Metal-organic chemical vapor deposition Oxides Semiconducting materials |
| DOI | 10.1016/j.jcrysgro.2014.07.011 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4799549 |
| 专题 | 山东大学 |
| 作者单位 | 1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. 2.Chinese Acad Sci, Sh |
| 推荐引用方式 GB/T 7714 | Du, Xuejian,Mi, Wei,Luan, Caina,et al. Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2014,404:75-79. |
| APA | Du, Xuejian,Mi, Wei,Luan, Caina,Li, Zhao,Xia, Changtai,&Ma, Jin.(2014).Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,404,75-79. |
| MLA | Du, Xuejian,et al."Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 404(2014):75-79. |
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