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	Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps
	Wang, Yujin; Zhu, Chuanrui; Shen, Yan; Yang, Haifang; Liu, Zhe; Gu, Changzhi; Liu, Baoli; Xu, Xiangang
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2014
卷号	32期号:5
DOI	10.1116/1.4893437
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4799296
专题	山东大学
作者单位	Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, B
推荐引用方式 GB/T 7714	Wang, Yujin,Zhu, Chuanrui,Shen, Yan,et al. Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2014,32(5).
APA	Wang, Yujin.,Zhu, Chuanrui.,Shen, Yan.,Yang, Haifang.,Liu, Zhe.,...&Xu, Xiangang.(2014).Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,32(5).
MLA	Wang, Yujin,et al."Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 32.5(2014).

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