| Multi-polar resistance switching and memory effect in copper phthalocyanine junctions | |
| Qiao SZ(乔士柱); Kang SS(康仕寿); Qin YF(秦羽丰); Li Q(李强); Zhong H(钟海); Kang Y(康韵); Yu SY(于淑云); Han GB(韩广兵); Yan SS(颜世申); Mei LM(梅良模) | |
| 刊名 | Chinese Physics B
 |
| 2014 | |
| 期号 | 05页码:627-633 |
| 关键词 | organic memory resistance switching copper phthalocyanine |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4794799 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Physics and State Key Lab of Crystal Materials,Shandong University 2.[乔士柱 |
| 推荐引用方式 GB/T 7714 | Qiao SZ,Kang SS,Qin YF,et al. Multi-polar resistance switching and memory effect in copper phthalocyanine junctions[J]. Chinese Physics B,2014(05):627-633. |
| APA | Qiao SZ.,Kang SS.,Qin YF.,Li Q.,Zhong H.,...&Mei LM.(2014).Multi-polar resistance switching and memory effect in copper phthalocyanine junctions.Chinese Physics B(05),627-633. |
| MLA | Qiao SZ,et al."Multi-polar resistance switching and memory effect in copper phthalocyanine junctions".Chinese Physics B .05(2014):627-633. |
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