| Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE | |
| Lv HY(吕海燕); Mou Q(牟奇); Zhang L(张磊); Lv YJ(吕元杰); Ji ZW(冀子武); Feng ZH(冯志红); Xu XG(徐现刚); Guo QX(郭其新) | |
| 刊名 | Chinese Physics B
 |
| 2015 | |
| 卷号 | 24期号:12页码:352-357 |
| 关键词 | photoluminescence ZnTe bulk crystal ZnTe epilayer defect or impurity-related emissions |
| DOI | 10.1088/1674-1056/24/12/124207 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4789369 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Physics, Shandong University 2.Natio |
| 推荐引用方式 GB/T 7714 | Lv HY,Mou Q,Zhang L,et al. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE[J]. Chinese Physics B,2015,24(12):352-357. |
| APA | Lv HY.,Mou Q.,Zhang L.,Lv YJ.,Ji ZW.,...&Guo QX.(2015).Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE.Chinese Physics B,24(12),352-357. |
| MLA | Lv HY,et al."Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE".Chinese Physics B 24.12(2015):352-357. |
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