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	Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
	Yang M(杨铭); Lin ZJ(林兆军); Zhao JT(赵景涛); Wang YT(王玉堂); Li ZY(李志远); Lv YJ(吕元杰); Feng ZH(冯志红)
刊名	Chinese Physics B
	2015
卷号	24期号:11页码:410-413
关键词	AlGaN/GaN heterostructure field effect transistors(HFETs) switching characteristics substrate bias
DOI	10.1088/1674-1056/24/11/117103
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4787670
专题	山东大学
作者单位	1.School of Physics, Shandong University 2.National Key La
推荐引用方式 GB/T 7714	Yang M,Lin ZJ,Zhao JT,et al. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors[J]. Chinese Physics B,2015,24(11):410-413.
APA	Yang M.,Lin ZJ.,Zhao JT.,Wang YT.,Li ZY.,...&Feng ZH.(2015).Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors.Chinese Physics B,24(11),410-413.
MLA	Yang M,et al."Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors".Chinese Physics B 24.11(2015):410-413.

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