Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors | |
Yang M(杨铭); Lin ZJ(林兆军); Zhao JT(赵景涛); Wang YT(王玉堂); Li ZY(李志远); Lv YJ(吕元杰); Feng ZH(冯志红) | |
刊名 | Chinese Physics B
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2015 | |
卷号 | 24期号:11页码:410-413 |
关键词 | AlGaN/GaN heterostructure field effect transistors(HFETs) switching characteristics substrate bias |
DOI | 10.1088/1674-1056/24/11/117103 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4787670 |
专题 | 山东大学 |
作者单位 | 1.School of Physics, Shandong University 2.National Key La |
推荐引用方式 GB/T 7714 | Yang M,Lin ZJ,Zhao JT,et al. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors[J]. Chinese Physics B,2015,24(11):410-413. |
APA | Yang M.,Lin ZJ.,Zhao JT.,Wang YT.,Li ZY.,...&Feng ZH.(2015).Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors.Chinese Physics B,24(11),410-413. |
MLA | Yang M,et al."Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors".Chinese Physics B 24.11(2015):410-413. |
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