| Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions | |
| Zhang, Kun; Cao, Yan-ling; Fang, Yue-wen; Li, Qiang; Zhang, Jie; Duan, Chun-gang; Yan, Shi-shen; Tian, Yu-feng; Huang, Rong; Zheng, 更多 | |
| 刊名 | NANOSCALE
 |
| 2015 | |
| 卷号 | 7期号:14页码:6334-6339 |
| DOI | 10.1039/c5nr00522a |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4786586 |
| 专题 | 山东大学 |
| 作者单位 | Shandong |
| 推荐引用方式 GB/T 7714 | Zhang, Kun,Cao, Yan-ling,Fang, Yue-wen,et al. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions[J]. NANOSCALE,2015,7(14):6334-6339. |
| APA | Zhang, Kun.,Cao, Yan-ling.,Fang, Yue-wen.,Li, Qiang.,Zhang, Jie.,...&Zheng, 更多.(2015).Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.NANOSCALE,7(14),6334-6339. |
| MLA | Zhang, Kun,et al."Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions".NANOSCALE 7.14(2015):6334-6339. |
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