An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method | |
Yang, Qing; Yuan, Yirang | |
刊名 | 高等学校计算数学学报
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2015 | |
卷号 | 8期号:3页码:356-382 |
关键词 | Three-dimensional semiconductor devices characteristics-mixed finite element method mixed finite element method post-processing step error bound |
DOI | 10.4208/nmtma.2015.my12031 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4779681 |
专题 | 山东大学 |
作者单位 | 1.School of Mathematical Science, Shandong Normal University, Jinan, Shandong 250014, China. 2.Institute of Mathematics, Shandon |
推荐引用方式 GB/T 7714 | Yang, Qing,Yuan, Yirang. An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method[J]. 高等学校计算数学学报,2015,8(3):356-382. |
APA | Yang, Qing,&Yuan, Yirang.(2015).An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method.高等学校计算数学学报,8(3),356-382. |
MLA | Yang, Qing,et al."An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method".高等学校计算数学学报 8.3(2015):356-382. |
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