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	An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method
	Yang, Qing; Yuan, Yirang
刊名	高等学校计算数学学报
	2015
卷号	8期号:3页码:356-382
关键词	Three-dimensional semiconductor devices characteristics-mixed finite element method mixed finite element method post-processing step error bound
DOI	10.4208/nmtma.2015.my12031
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4779681
专题	山东大学
作者单位	1.School of Mathematical Science, Shandong Normal University, Jinan, Shandong 250014, China. 2.Institute of Mathematics, Shandon
推荐引用方式 GB/T 7714	Yang, Qing,Yuan, Yirang. An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method[J]. 高等学校计算数学学报,2015,8(3):356-382.
APA	Yang, Qing,&Yuan, Yirang.(2015).An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method.高等学校计算数学学报,8(3),356-382.
MLA	Yang, Qing,et al."An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method".高等学校计算数学学报 8.3(2015):356-382.

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