Metal oxide semiconductor thin-film transistors: Device physics and compact modeling | |
Deng, Wanling[1]; Fang, Jielin[1]; Wei, Xixiong[1]; Yu, Fei[1] | |
2017 | |
页码 | 69 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4777055 |
专题 | 暨南大学 |
作者单位 | [1] College of Information Science and Technology, Jinan University, Guangzhou, 510630, China |
推荐引用方式 GB/T 7714 | Deng, Wanling[1],Fang, Jielin[1],Wei, Xixiong[1],et al. Metal oxide semiconductor thin-film transistors: Device physics and compact modeling[J],2017:69. |
APA | Deng, Wanling[1],Fang, Jielin[1],Wei, Xixiong[1],&Yu, Fei[1].(2017).Metal oxide semiconductor thin-film transistors: Device physics and compact modeling.,69. |
MLA | Deng, Wanling[1],et al."Metal oxide semiconductor thin-film transistors: Device physics and compact modeling".(2017):69. |
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