Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes | |
Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin | |
刊名 | Applied physics letters
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2015 | |
期号 | 9页码:093505-1-093505-5 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4769485 |
专题 | 山东大学 |
作者单位 | 1.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England 2.Univ Manchester, Sch Elect & Elect Engn, Man |
推荐引用方式 GB/T 7714 | Zhang, Jiawei,Zhang, Linqing,Ma, Xiaochen,et al. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes[J]. Applied physics letters,2015(9):093505-1-093505-5. |
APA | Zhang, Jiawei.,Zhang, Linqing.,Ma, Xiaochen.,Wilson, Joshua.,Jin, Jidong.,...&Song, Aimin.(2015).Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes.Applied physics letters(9),093505-1-093505-5. |
MLA | Zhang, Jiawei,et al."Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes".Applied physics letters .9(2015):093505-1-093505-5. |
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