Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors | |
Cui, Peng; Liu, Huan; Lin, Zhaojun; Cheng, Aijie; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao | |
刊名 | SUPERLATTICES AND MICROSTRUCTURES
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2016 | |
卷号 | 100页码:358-364 |
关键词 | AlGaN/GaN HFETs Cap layer thickness Polarization Coulomb field scattering |
DOI | 10.1016/j.spmi.2016.09.039 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4763570 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China. 2.Shandong Univ |
推荐引用方式 GB/T 7714 | Cui, Peng,Liu, Huan,Lin, Zhaojun,et al. Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors[J]. SUPERLATTICES AND MICROSTRUCTURES,2016,100:358-364. |
APA | Cui, Peng.,Liu, Huan.,Lin, Zhaojun.,Cheng, Aijie.,Liu, Yan.,...&Luan, Chongbiao.(2016).Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors.SUPERLATTICES AND MICROSTRUCTURES,100,358-364. |
MLA | Cui, Peng,et al."Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors".SUPERLATTICES AND MICROSTRUCTURES 100(2016):358-364. |
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