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	Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
	Cui, Peng; Liu, Huan; Lin, Zhaojun; Cheng, Aijie; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2016
卷号	100页码:358-364
关键词	AlGaN/GaN HFETs Cap layer thickness Polarization Coulomb field scattering
DOI	10.1016/j.spmi.2016.09.039
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4763570
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China. 2.Shandong Univ
推荐引用方式 GB/T 7714	Cui, Peng,Liu, Huan,Lin, Zhaojun,et al. Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors[J]. SUPERLATTICES AND MICROSTRUCTURES,2016,100:358-364.
APA	Cui, Peng.,Liu, Huan.,Lin, Zhaojun.,Cheng, Aijie.,Liu, Yan.,...&Luan, Chongbiao.(2016).Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors.SUPERLATTICES AND MICROSTRUCTURES,100,358-364.
MLA	Cui, Peng,et al."Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors".SUPERLATTICES AND MICROSTRUCTURES 100(2016):358-364.

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