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High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications.
Huai, Yiming; Gan, Huadong; Wang, Zihui; Xu, Pengfa; Hao, Xiaojie; Yen, Bing K.; Malmhall, Roger; Pakala, Nirav; Wang, Cory; Zhang, Jing
会议名称APPLIED PHYSICS LETTERS
会议日期2018
关键词PERPENDICULAR magnetic anisotropy MAGNETIC tunnelling INTERFACES (Physical sciences) MRAM devices MAGNETORESISTANCE
会议录Vol.112 No.9
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/4754183
专题湖南大学
作者单位1.Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538, USA
2.Applied Materials, 974 East Arques Avenue, Sunnyvale, California 94085, USA
推荐引用方式
GB/T 7714
Huai, Yiming,Gan, Huadong,Wang, Zihui,et al. High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications.[C]. 见:APPLIED PHYSICS LETTERS. 2018.
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