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	Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage
	Liang, SW; Wang, J; Fang, F; Deng, LF; Shen, ZJ
刊名	IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
	2019
卷号	Vol.7 No.3页码:1513-1518
关键词	4H-SiC blocking voltage freewheeling diode power transistor TCAD simulation
ISSN号	2168-6777
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4750366
专题	湖南大学
作者单位	1.Hunan Univ, Changsha 410082, Hunan, Peoples R China 2.Illinois Inst Technol, Chicago, IL 60616 USA
推荐引用方式 GB/T 7714	Liang, SW,Wang, J,Fang, F,et al. Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage[J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,2019,Vol.7 No.3:1513-1518.
APA	Liang, SW,Wang, J,Fang, F,Deng, LF,&Shen, ZJ.(2019).Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage.IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,Vol.7 No.3,1513-1518.
MLA	Liang, SW,et al."Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage".IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS Vol.7 No.3(2019):1513-1518.

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