| An improved analytical model for the statistics of SET emergence point in HfO memristive device | |
| Dong Xiang; Rulin Zhang; Yu Li; Cong Ye; Enrique Miranda; Jordi Suñé; Shibing Long | |
| 刊名 | AIP Advances
 |
| 2019 | |
| 卷号 | Vol.9 No.2页码:025118 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4746134 |
| 专题 | 湖南大学 |
| 作者单位 | 1.School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China 2.Hubei Key Laboratory of Applied Mathematics, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China 3.Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China 4.Departamentd’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain 5.School of Microelectronics, University of Science and Technology of China, Hefei 230027, China a) Corresponding authors: yecong@issp.ac.cn 6.shibinglong@ustc.edu.cn |
| 推荐引用方式 GB/T 7714 | Dong Xiang,Rulin Zhang,Yu Li,et al. An improved analytical model for the statistics of SET emergence point in HfO memristive device[J]. AIP Advances,2019,Vol.9 No.2:025118. |
| APA | Dong Xiang.,Rulin Zhang.,Yu Li.,Cong Ye.,Enrique Miranda.,...&Shibing Long.(2019).An improved analytical model for the statistics of SET emergence point in HfO memristive device.AIP Advances,Vol.9 No.2,025118. |
| MLA | Dong Xiang,et al."An improved analytical model for the statistics of SET emergence point in HfO memristive device".AIP Advances Vol.9 No.2(2019):025118. |
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