1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor | |
Sheng-Lei Zhao; Zhi-Zhe Wang; Da-Zheng Chen; Mao-Jun Wang; Yang Dai; Xiao-Hua Ma; Jin-Cheng Zhang and Yue Hao | |
刊名 | Chinese Physics B
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2019 | |
卷号 | Vol.28 No.2页码:027301 |
ISSN号 | 1674-1056;2058-3834 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4741710 |
专题 | 湖南大学 |
作者单位 | 1.Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China 2.China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China 3.Institute of Microelectronics, Peking University, Beijing 100871, China 4.School of Information Science and Technology, Northwest University, Xi’an 710127, China |
推荐引用方式 GB/T 7714 | Sheng-Lei Zhao,Zhi-Zhe Wang,Da-Zheng Chen,et al. 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor[J]. Chinese Physics B,2019,Vol.28 No.2:027301. |
APA | Sheng-Lei Zhao.,Zhi-Zhe Wang.,Da-Zheng Chen.,Mao-Jun Wang.,Yang Dai.,...&Jin-Cheng Zhang and Yue Hao.(2019).1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor.Chinese Physics B,Vol.28 No.2,027301. |
MLA | Sheng-Lei Zhao,et al."1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor".Chinese Physics B Vol.28 No.2(2019):027301. |
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