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	1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
	Sheng-Lei Zhao; Zhi-Zhe Wang; Da-Zheng Chen; Mao-Jun Wang; Yang Dai; Xiao-Hua Ma; Jin-Cheng Zhang and Yue Hao
刊名	Chinese Physics B
	2019
卷号	Vol.28 No.2页码:027301
ISSN号	1674-1056;2058-3834
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4741710
专题	湖南大学
作者单位	1.Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China 2.China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China 3.Institute of Microelectronics, Peking University, Beijing 100871, China 4.School of Information Science and Technology, Northwest University, Xi’an 710127, China
推荐引用方式 GB/T 7714	Sheng-Lei Zhao,Zhi-Zhe Wang,Da-Zheng Chen,et al. 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor[J]. Chinese Physics B,2019,Vol.28 No.2:027301.
APA	Sheng-Lei Zhao.,Zhi-Zhe Wang.,Da-Zheng Chen.,Mao-Jun Wang.,Yang Dai.,...&Jin-Cheng Zhang and Yue Hao.(2019).1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor.Chinese Physics B,Vol.28 No.2,027301.
MLA	Sheng-Lei Zhao,et al."1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor".Chinese Physics B Vol.28 No.2(2019):027301.

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